A research team at the International Center for Materials Nanoarchitectonics (WPI-MANA)
unveils what they are calling a “highly temperature-stable GaN resonator that boasts high-frequency stability, high Q factor, and the potential for large-scale integration with silicon technology.” The device forecasts faster 5G electronics due to better integration of GaN-based micro-electromechanical (MEMS) and nano-electromechanical systems (NEMS) with current semiconductor technology.
Fabricated on a silicon substrate, the GaN resonator exhibits a low temperature coefficient of frequency (TCF) of several parts per million per degree Kelvin (ppm/K) and high-quality (Q) factors without degradation up to 600°K. The MANA team employed elastic strain engineering, a technique to modulate the strain at the heterojunction of the resonator structure. This helps to store energy and thereby increase Q factors. In contrast to conventional flexural modes, the internal thermal stress at high temperatures improved the TCF of the GaN MEMS resonator by over 10 times without losing the high Q factor.
The research team consists of Liwen Sang, Independent Scientist (WPI-MANA, National Institute for Materials Science), and her collaborators. For deeper insights, peruse the Self-Temperature-Compensated GaN MEMS Resonators through Strain Engineering up to 600 K paper.
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